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Meaning that the transfer rate is roughly twice the speed of the I/O bus clock
5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Configuration 16-chip 128M x8 Pieces in Kit 1 Compatibility
5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank CAS Latency CL7 Configuration 16-chip 256M x8 Pieces in Kit 1 Compatibility
M393A2K43BB1-CRC Capacity 16GB (1x 16GB) Brand Samsung Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1
Hynix 4GB (1x 4GB) DDR3-1333 PC3-10600 1.5V DR x8 240-pin UDIMM RAM Module Classification_ram-ddr2-667-rdimm-8gb-2x-dr Meaning that the transfer rateProduct Overview This 4GB (1x 4GB) DDR3 1333 MT s Dual rank, x8 configuration RAM module from Hynix is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
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