Samsung 1GB (1x 1GB) CL2 DDR-266 PC2100 2.5V DR x4 ECC Registered 184-pin RDIMM RAM Module Classification_ram-ddr3-1066-sodimm-8gb-1x-dr-fm M386A8K40BM1-CPB Capacity 64GB (1x 64GB)

M386A8K40BM1-CPB Capacity 64GB (1x 64GB) Brand Samsung Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1

M312L5720BG0-CB3 Capacity 2GB (1x 2GB) Brand Samsung Speed DDR-333 - 333MT/s - PC2700 Voltage 2

5V Technology DDR3 Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM Ranks Dual rank Configuration 18-chip 256Mx8 Pieces in Kit 1 Compatibility

This 4GB (1x 4GB) DDR3 1600 MT/s RAM module from Micron is for use in DDR3 compatible systems and operates at 1600 MT/s with an overall transfer rate of PC3-12800

Samsung 1GB (1x 1GB) CL2 DDR-266 PC2100 2.5V DR x4 ECC Registered 184-pin RDIMM RAM Module Classification_ram-ddr3-1066-sodimm-8gb-1x-dr-fm M386A8K40BM1-CPB Capacity 64GB (1x 64GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 1GB (1x 1GB) DDR 266 MT s 184 pin RDIMM RAM module from Samsung . This Dual rank, x4 configuration RAM module is for use in DDR compatible systems and operates at 266 MT s with an overall transfer rate of PC2100. This RAM module also operates at a standard voltage of 2. 5V with a CAS Latency of