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Compatibility
5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Configuration 16-chip 128M x8 Pieces in Kit 1 Compatibility
M471B5673FH0-CF8 Capacity 2GB (1x 2GB) Brand Samsung Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1
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Hynix 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V 240-pin UDIMM RAM Module Form Factor_288-pin EUDIMM CompatibilityProduct Overview This 4GB (1x 4GB) DDR3 1333 MT s RAM module from Hynix is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL9, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
