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8V Technology DDR2 Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM Ranks Single rank Pieces in Kit 1 Compatibility
which is not actually correct
8V Technology DDR2 Error Correction ECC Signal Processing Fully Buffered Form Factor 240-pin FB-DIMM Ranks Dual rank Configuration x4 Pieces in Kit 2 Compatibility
2xM378T5663EH3-CF7 Capacity 4GB (2x 2GB) Brand Samsung Speed DDR2-800 - 800MT/s - PC2-6400 Voltage 1
Hynix 4GB (1x 4GB) DDR3-1600 PC3-12800 1.5V DR x8 204-pin SODIMM RAM Module Signal Processing_Fully Buffered 8V Technology DDR2 Error CorrectionProduct Overview This 4GB (1x 4GB) DDR3 1600 MT s Dual rank, x8 configuration RAM module from Hynix is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
