Hynix 1GB (1x 1GB) CL9 DDR3-1333 PC3-10600 1.8V 204-pin SODIMM RAM Module Classification_ram-ddr3-1333-udimm-8gb-2x-dr-fm MTA18ASF2G72PZ-2G6D1 Capacity 16GB (1x 16GB)

MTA18ASF2G72PZ-2G6D1 Capacity 16GB (1x 16GB) Brand Micron Speed DDR4-2666 - 2666MT/s - PC4-21300 Voltage 1

CT2K4G3S1067M Capacity 8GB (2x 4GB) Brand Crucial Speed DDR3L-1066 -1066MT/s - 1067MT/s - PC3L-8500 Voltage 1

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Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 64GB (2x 32GB) DDR4 2666 MT/s 288-pin RDIMM RAM kit from Samsung

Hynix 1GB (1x 1GB) CL9 DDR3-1333 PC3-10600 1.8V 204-pin SODIMM RAM Module Classification_ram-ddr3-1333-udimm-8gb-2x-dr-fm MTA18ASF2G72PZ-2G6D1 Capacity 16GB (1x 16GB)Product Overview This 1GB (1x 1GB) DDR3 1333 MT s RAM module from Hynix is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 8V with a CAS Latency of CL9, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.