Hynix 4GB (1x 4GB) DDR3-1600 PC3-12800 1.5V DR x8 ECC Registered 240-pin RDIMM RAM Module Model_Mac_Book_Pro_5_2 8V Technology DDR2 Error Correction

8V Technology DDR2 Error Correction ECC Signal Processing Fully Buffered Form Factor 240-pin FB-DIMM Ranks Dual rank Configuration 36-chip 128Mx4 Pieces in Kit 2 Compatibility

5V Technology DDR3L Error Correction ECC Signal Processing Unbuffered Form Factor 240-pin EUDIMM Ranks Single rank Configuration 9-chip 256Mx8 Pieces in Kit 2 Compatibility

HMT351R7EFR8C-PBT3 Capacity 4GB (1x 4GB) Brand Hynix Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1

M391B1G73QH0-YK0 Capacity 8GB (1x 8GB) Brand Samsung Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1

Hynix 4GB (1x 4GB) DDR3-1600 PC3-12800 1.5V DR x8 ECC Registered 240-pin RDIMM RAM Module Model_Mac_Book_Pro_5_2 8V Technology DDR2 Error CorrectionProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3 1600 MT s 240 pin RDIMM RAM module from Hynix . This Dual rank, x8 configuration RAM module is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V and is designed