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M474A2K43BB1-CPBQ Capacity 16GB (1x 16GB) Brand Samsung Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1
This 4GB (1x 4GB) DDR2 800 MT/s Dual rank
but the effective rate is 333 megatransfers per second (MT/s) because there are 166 million rising edges per second and 166 million falling edges per second of a clock signal running at 166 MHz
2V Technology DDR4 Error Correction ECC Signal Processing Registered Form Factor 288-pin RDIMM Ranks Dual rank Configuration x8 Pieces in Kit 1
Hynix 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr3-1600-udimm-4gb-1x-sr-fm M474A2K43BB1-CPBQ Capacity 16GB (1x 16GB)Product Overview This 4GB (1x 4GB) DDR3L 1600 MT s RAM module from Hynix is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
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