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5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Dual rank Configuration 16-chip 256Mx8 Pieces in Kit 2 Compatibility
2xHMT125U6TFR8C-H9 Capacity 4GB (2x 2GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM CAS Latency CL9 Pieces in Kit 1 Compatibility
CT16G4DFD8266 Capacity 16GB (1x 16GB) Brand Crucial Speed DDR4-2666 - 2666MT/s - PC4-21300 Voltage 1
Samsung 1GB (1x 1GB) CL9 DDR3-1333 PC3-10600 1.8V 204-pin SODIMM RAM Module Classification_ram-ddr3l-1066-sodimm-2gb-1x-sr-fm 5V Technology DDR3L Error CorrectionProduct Overview This 1GB (1x 1GB) DDR3 1333 MT s RAM module from Samsung is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 8V with a CAS Latency of CL9, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
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