Samsung 4GB (1x 4GB) CL9 DDR3L-1333 PC3L-10600 1.35V / 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr2-667-dimm-4gb-1x-dr HMT351U6BFR8C-H9N0 Capacity 4GB (1x 4GB)

HMT351U6BFR8C-H9N0 Capacity 4GB (1x 4GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

M393A2G40EB2-CTD Capacity 16GB (1x 16GB) Brand Samsung Speed DDR4-2666 - 2666MT/s - PC4-21300 Voltage 1

2xHMT125S6AFR8C-G7 Capacity 4GB (2x 2GB) Brand Hynix Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1

This RAM kit runs at 533MHz per second

Samsung 4GB (1x 4GB) CL9 DDR3L-1333 PC3L-10600 1.35V / 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr2-667-dimm-4gb-1x-dr HMT351U6BFR8C-H9N0 Capacity 4GB (1x 4GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3L 1333 MT s 240 pin EUDIMM RAM module from Samsung . This RAM module is for use in DDR3L compatible systems and operates at 1333 MT s with an overall transfer rate of PC3L 10600. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL9, and