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5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank CAS Latency CL11 Configuration x8 Pieces in Kit 2 Compatibility
2xM378B2873FHS-CH9 Capacity 2GB (2x 1GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank Configuration x8 Pieces in Kit 1 Compatibility
HMA84GR7MFR4N-TF Capacity 32GB (1x 32GB) Brand Hynix Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1
Samsung Ramcity 16GB (1x 16GB) DDR4-2133 PC4-17000 1.2V DR x8 260-pin SODIMM RAM Module Classification_ram-ddr3l-1600-udimm-4gb-1x-sr-fm 5V Technology DDR3L Error CorrectionProduct Overview This 16GB (1x 16GB) DDR4 2133 MT s Dual rank, x8 configuration RAM module from Samsung x Ramcity is for use in DDR4 compatible systems and operates at 2133 MT s with an overall transfer rate of PC4 17000. This RAM module also operates at a standard voltage of 1. 2V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part
