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M393B5170EH1-CH9 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
8V with a CAS Latency of CL4
x16 configuration RAM module from Hynix is for use in DDR2 compatible systems and operates at 533 MT/s with an overall transfer rate of PC2-4200
8V Technology DDR2 Series Essentials Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Dual rank Configuration 16-chip 256Mx8 Pieces in Kit 1 Compatibility
Micron 8GB (1x 8GB) CL9 DDR3L-1333 PC3L-10600 1.35V / 1.5V ECC Registered 240-pin RDIMM RAM Module Classification_ram-ddr3-1333-udimm-2gb-1x-fm M393B5170EH1-CH9 Capacity 4GB (1x 4GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3L 1333 MT s 240 pin RDIMM RAM module from Micron . This RAM module is for use in DDR3L compatible systems and operates at 1333 MT s with an overall transfer rate of PC3L 10600. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL9, and is
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