Hynix 4GB (1x 4GB) DDR3-1333 PC3-10600 1.5V DR x8 204-pin SODIMM RAM Module Voltage_2.5V CT4G3S186DJM Capacity 4GB (1x 4GB)

CT4G3S186DJM Capacity 4GB (1x 4GB) Brand Crucial Speed DDR3L-1866 - 1866MT/s - PC3L-14900 Voltage 1

5V Technology DDR3L Error Correction ECC Signal Processing Unbuffered Form Factor 240-pin EUDIMM Ranks Dual rank Configuration x8 Pieces in Kit 2 Compatibility

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 1GB (1x 1GB) DDR 266 MT/s 184-pin RDIMM RAM module from RamCity

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (2x 8GB) DDR3 1066 MT/s 240-pin RDIMM RAM kit from Samsung

Hynix 4GB (1x 4GB) DDR3-1333 PC3-10600 1.5V DR x8 204-pin SODIMM RAM Module Voltage_2.5V CT4G3S186DJM Capacity 4GB (1x 4GB)Product Overview This 4GB (1x 4GB) DDR3 1333 MT s Dual rank, x8 configuration RAM module from Hynix is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.