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Hynix 512MB (1x 512MB) CL4 DDR2-533 PC2-4200 1.8V DR x16 200-pin SODIMM RAM Module Classification_ram-ddr3-1066-rdimm-8gb-1x-qr 8V Technology DDR2 Error Correction

SKU 1703245839
4.5
USD11.99 USD44.99

Pay in 4 interest-free payments of $3.00 Learn more

Shipping Estimate
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  • USA
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Ships within 48 hours · Estimated delivery Aug 20 - Aug 25

Description

8V Technology DDR2 Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM Ranks Single rank Pieces in Kit 2 Compatibility

This RAM module runs at 400MHz per second

but the effective rate is 266 megatransfers per second (MT/s) because there are 133 million rising edges per second and 133 million falling edges per second of a clock signal running at 133 MHz

2xMTA18ASF2G72AZ-2G3B1ZG Capacity 32GB (2x 16GB) Brand Micron Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

Hynix 512MB (1x 512MB) CL4 DDR2-533 PC2-4200 1.8V DR x16 200-pin SODIMM RAM Module Classification_ram-ddr3-1066-rdimm-8gb-1x-qr 8V Technology DDR2 Error CorrectionProduct Overview This 512MB (1x 512MB) DDR2 533 MT s Dual rank, x16 configuration RAM module from Hynix is for use in DDR2 compatible systems and operates at 533 MT s with an overall transfer rate of PC2 4200. This RAM module also operates at a standard voltage of 1. 8V with a CAS Latency of CL4, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical

Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
  • To process your return/exchange, please contact us at [email protected]
  • Please click here for more details>>> Return & Exchange Policy

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