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M471B5273DH0-CH9 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Configuration 16-chip 128M x8 Pieces in Kit 1 Compatibility
2V Technology DDR4 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Dual rank Pieces in Kit 1 Compatibility
This 8GB (2x 4GB) DDR3L 1333 MT/s Dual rank
Hynix 32GB (1x 32GB) DDR3-1866 PC3-14900 1.5V QR x4 ECC Load Reduced 240-pin LRDIMM RAM Module Classification_ram-ddr3l-1333-rdimm-8gb-1x-dr M471B5273DH0-CH9 Capacity 4GB (1x 4GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 32GB (1x 32GB) DDR3 1866 MT s 240 pin LRDIMM RAM module from Hynix . This Quad rank, x4 configuration RAM module is for use in DDR3 compatible systems and operates at 1866 MT s with an overall transfer rate of PC3 14900. This RAM module also operates at a standard voltage of 1. 5V and is
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